Rapid Thermal Processing (RTP) Technology: Breaking Through Semiconductor Process Bottlenecks
In semiconductor manufacturing, Rapid Thermal Processing (RTP) has become a core tool for achieving breakthroughs in device performance and optimizing processes. Compared to traditional high-temperature furnace processes, RTP utilizes a single-wafer operation mode and precise thermal control, effectively solving the technical challenges of thermal budget control, ultra-shallow junction formation, and process consistency in advanced nodes.
As semiconductor processes advance to 5nm and below, device feature sizes continue to shrink, and the demand for high-precision thermal treatment becomes more critical. Smartnoble offers RTP technology solutions designed to meet the needs of modern semiconductor production, helping customers maintain competitiveness in a rapidly evolving market.
Advantages and Innovations of RTP Technology
- Ultra-fast Temperature Change Rates
RTP uses high-power halogen lamps or laser heating, achieving heating and cooling rates of over 250°C/s, far surpassing the traditional furnace processes, which operate at 5-10°C/s. The rapid heating and cooling ensure high process precision while significantly shortening production cycles. - Precise Thermal Control
Equipped with embedded infrared temperature sensors and a closed-loop feedback system, RTP technology achieves temperature uniformity of ±1°C (3σ) across the wafer and supports dynamic temperature control over a wide range of 400-1400°C, greatly improving process consistency. - Low Thermal Stress Design
Utilizing a quartz 3-point support structure in a vacuum or low-pressure environment, RTP minimizes thermal contact resistance, eliminating convection heat dissipation interference and reducing thermal stress on wafers, ensuring high-quality semiconductor devices. - Improved Thermal Budget Control
RTP technology achieves a thermal budget of less than 10°C·s, effectively suppressing impurity diffusion through millisecond-level pulsed annealing, and is particularly well-suited for ultra-shallow junction activation and metal silicide formation processes.
Typical Applications of RTP Technology
- Ultra-Shallow Junction Impurity Activation
For ultra-low-energy ion implantation (<1keV), RTP achieves an impurity activation rate of >95% with millisecond-level annealing, while limiting the Transient Enhanced Diffusion (TED) effect to less than 2nm, mitigating short-channel effects. - Metal Silicide Formation
In Ni/Co silicide formation, RTP uses a two-step process (500°C nucleation + 850°C alloying) to form silicide layers with low resistivity (<10μΩ·cm) and a 60% reduction in interface roughness compared to traditional furnace processes. - Dielectric Layer Thermal Treatment
For phosphosilicate glass (PSG) reflow processes, RTP employs a stepwise temperature ramp (400°C → 600°C → 900°C), increasing gap-fill capability by 3 times and controlling boron penetration effects to less than 0.5nm/s. - Advanced Gate Engineering
In High-k Metal Gate (HKMG) processes, RTP is used to activate interface nitrogen and for rapid annealing post-metal gate deposition, ensuring optimal equivalent oxide thickness (EOT) and minimizing gate leakage current.
Smartnoble’s RTP Technology Solutions
As a leading supplier of semiconductor equipment, Smartnoble is dedicated to providing advanced RTP technology solutions. Our RTP equipment supports a wide range of applications, including ultra-shallow junction activation, metal silicide formation, and dielectric layer thermal treatment, helping customers enhance production efficiency and quality in advanced semiconductor processes.Smartnoble's RTP equipment features high throughput, reliability, and low energy consumption, widely used in semiconductor manufacturing at 5nm and below process nodes. Our team is committed to continuous innovation, addressing the challenges of next-generation semiconductor manufacturing.
Contact us:www.smartnoble.com