Hybrid Bonding: The Core Technology Driving the Future of Advanced Packaging
As semiconductor technology rapidly advances, Moore’s Law is encountering challenges. Traditional packaging processes are increasingly unable to meet the demands of shrinking chip sizes and higher performance requirements. Hybrid Bonding technology provides a breakthrough solution, enabling ultra-high-density interconnects and overcoming the limitations of traditional solder bump-based packaging.
Hybrid bonding removes the need for conventional micro-bumps, utilizing copper-to-copper atomic bonding combined with dielectric layers (such as SiO₂) to directly connect chips. This process achieves sub-micron (<1μm) interconnects, increasing interconnect density by 100x to 1000x, which is essential for advanced packaging. Compared to traditional packaging, hybrid bonding offers unprecedented performance and space optimization.
Core Technology: No-Bump Interconnection Mechanism
The essence of hybrid bonding lies in eliminating traditional micro-bumps, instead using copper-to-copper bonding and dielectric covalent connections (like SiO₂). This enables highly efficient electrical conduction and optimized electrical isolation, ensuring signal clarity and reducing leakage current. This process also enhances the transistor switching speed, bandwidth, and overall chip performance.
Core Application Scenarios: From HBM to AI Chips
- High-Bandwidth Memory (HBM): In HBM5 memory packaging, hybrid bonding is the only solution that meets JEDEC standards. It compresses the inter-layer spacing to 1-2μm and supports 20-layer stacking with a total height ≤775μm. Major companies such as SK Hynix and Samsung plan to use this process in mass production starting in 2026, targeting a bandwidth of 6.56 TB/s.
- Heterogeneous Integration & AI Chips: TSMC's SoIC integrates logic chips (e.g., N3 node) and SRAM through hybrid bonding, enabling 3D stacking for AMD MI300 AI chips, boosting interconnect efficiency by 3x. The Broadcom XDSiP platform combines 12 layers of HBM with 6000mm² silicon chips, achieving 7 times the signal density of traditional packaging and reducing PHY interface power consumption by 90%.
- Image Sensors & Storage: In CIS (Image Sensor) applications, companies like Sony and Samsung use hybrid bonding to connect pixel layers and logic layers, reducing optical path loss by 30%. In 3D NAND storage, Samsung's V10 NAND (to be mass-produced by 2025) uses hybrid bonding to solve stacking reliability issues in 420-layer stacks, significantly enhancing bonding stability.
Despite its significant advancements, hybrid bonding still faces several technical challenges:
- Surface Flatness: The roughness of the dielectric layer needs to be under 0.5nm (copper layer <2nm), which requires nano-level CMP (chemical mechanical polishing) processes.
- Cleanliness Control: Hybrid bonding is extremely sensitive to particle contamination. Even 1μm particles can cause 10mm voids, requiring Class 1 cleanroom conditions (ISO 3 level).
- Alignment Precision: The alignment precision for hybrid bonding equipment needs to be ±100nm, with leading equipment achieving ±50nm accuracy.
As a leading equipment manufacturer, Smartnoble is committed to providing cutting-edge hybrid bonding solutions for the semiconductor industry. Our equipment includes:
- Precision Bonding Systems: Ensuring high-quality copper-to-copper and dielectric layer connections.
- Nano-Level CMP Systems: Ensuring smooth surfaces and achieving high flatness.
- Automated Cleaning and Inspection Equipment: Ensuring clean environments and precise alignment during production.
Contact us:www.smartnoble.com